Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

The antiferroelectricity in HfZrO 2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SS <tex-math notation="LaTeX">ₘᵢₙ=23 </tex-math> mV/dec and SS <tex-math notation="LaTeX">avg=50 </tex-math> mV/dec over 4 decades of <tex-math notation="LaTeX">IDS </tex-math> is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.