Flexible Low-voltage, Hysteresis-free Ferroelectric Polymer Transistors

The flexibility and low power consumption are of great significance for the research of polymer transistors, especially in the field of Internet of Things (IoT) and wearable electronics. To achieve low power consumption, it is necessary for the device to operate at low operating voltages while having a small subthreshold swing (SS). Here, by combining ferroelectric Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) gating, high mobility polymer semiconductor film and van der Waals (vdW) integrated process, we realize flexible polymer field-effect transistors (PFET) that deliver low SS (around 100 mV/dec) and two-volt operating voltage. Ferroelectric gate booster enables better switching characteristics of the device, while the vdW process ensures atomically flat metal/semiconductor contacts, which is crucial for device performance. This work provides an additional direction for the further development of flexible, low-power PFETs.