Comparison of Structural and Electrical Properties of Er 2 O 3 and ErTi x O y Charge-Trapping Layers for InGaZnO Thin-Film Transistor Nonvolatile Memory Devices

In this letter, we investigate the structural and electrical characteristics of Er2O3and ErTixOy charge-trapping layers for InGaZnO thin-film transistor (TFT) nonvolatile memory devices for the first time. Compared with the Er2O3layer, the InGaZnO TFT memory device incorporating the ErTixOy charge-trapping layer exhibited a lower subthreshold swing of 146 mV/decade, a larger memory window of 3.9 V, a smaller charge loss of 10%, and better endurance performance for program/erase cycle up to 105, presumably due to the high charge efficiency in the ErTixOyfilm.