Recrystallization and Related Phenomena. Mechanism of Orientation Selectivity of Secondary Recrystallization in Fe-3%Si Alloy.

Selective growth behavior of {110} <001> grains has been studied utilizing the temperature gradient annealing method. As grains grow, the average deviation angle from the ideal {110} <001> orientation becomes smaller and orientation distribution changes corresponding to that of coincidence grains in the matrix. Secondary recrystallization temperature depends on the orientation of secondary recrystallized grain and sharper {110} <001> grains grow preferentially at lower temperatures. These phenomena are explained by modified Hillert's model of grain growth, which takes the grain boundary characteristics into account. Sharper {110} <001> grains, which have higher frequency of coincidence grains in the primary recrystallized matrix, suffer lower pinning force from the precipitates and thus grow preferentially at lower temperatures.