Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation

This paper proposes a hydrogen-terminated diamond MOSFET structure with a buried N-layer and systematically studies its static and breakdown characteristics using Sentaurus TCAD. By introducing an N-type buried layer below the gate-drain channel, the internal electric field distribution of the device is effectively modulated, while new electric field peaks are formed within the drift region, achieving uniform distribution of the electric field between gates and drains. Simulation results show that the proposed structure can significantly increase the device breakdown voltage while having less impact on on-resistance, thereby achieving a higher Baliga’s figure of merit (BFOM).