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March 1, 1986IEEE Electron Device LettersOpen Access

Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's

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Authors

CCC. CanaliBerlin University of the ArtsFCF. CastaldoUniversidade Tecnológica Federal do ParanáFFF. FantiniON Semiconductor (United States)

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Canali et al. (1986) studied this question.

synapsesocial.com/papers/6ab9df1d013637f052d528b2https://doi.org/10.1109/edl.1986.26338
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