Transmission electron microscopy study of stacking faults and the associated partial dislocations in pseudomorphic epilayers of ZnSe/GaAs(001)

V-shaped double triangular faults in ZnSe/GaAs epilayers have been identified to be incomplete stacking fault pyramids and single stacking faults identified as stacking fault trapezoids. It is confirmed by transmission electron microscopy that 〈101〉 open boundaries of incomplete stacking fault pyramids are 30° Shockley partial dislocations. The closely spaced parallel acute and obtuse stair-rod dislocation pair in stacking fault trapezoids form a dislocation dipole.