A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

Energy‐tunable single‐photon emitters (SPEs) compatible with Si photonic platforms are key for scalable quantum photonic technologies. In the present work, we demonstrate a post‐growth method to realise tunable SPEs in dilute nitrides GaAs/GaAsN/GaAs core–multishell single nanowires (NWs) on a Si substrate. Excitons confined in the lower‐gap GaAsN shell are predominantly localized in N‐cluster states, leading to a nearly continuous emission band in the photoluminescence (PL) spectra at low temperature. Post‐growth irradiation with low‐energy H‐ions promotes the formation of N–H complexes that sizably suppress N‐induced localized states in the electronic potential. This changes the NW PL dramatically, with the appearance of energy‐tunable (900–1000 nm), spectrally isolated, narrow excitonic lines. Time‐resolved µ‐PL reveals ns‐scale lifetimes associated with excitons localized at potential minima. These sharp emission lines at 5 K operate as SPEs, as demonstrated by second‐order autocorrelation measurements under continuous‐wave and pulsed excitation. This approach paves the way for using dilute nitride NWs as a Si‐compatible platform for post‐growth energy‐tunable site‐controlled SPEs.