Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films

This is the authors' abstract. We don't add key points for this paper.

The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in the heterostructure formed by interfacing MnBi 2 Te 4 (MBT) thin films and monolayer In 2 Te 3 . Our first-principles calculations demonstrate that the polarization direction in In 2 Te 3 can strongly alter electronic band structures in the MBT/In 2 Te 3 heterostructure, and even induces a topological phase transition between quantum anomalous Hall ( C = 1) and trivial ( C = 0) insulating states, originating from the change of band order induced by the switch of out-of-plane polarization. Our work highlights the promising potential of ferroelectric-topological heterostructures in aiding the development of reconfigurable quantum devices, and creating new possibilities for progress in advanced microelectronic and spintronic systems.