Can Organic and Oxide Semiconductors Do More Than Coexist? Functional Heterointerfaces for Hybrid Thin‐Film Transistors

Organic and oxide semiconductors differ fundamentally in their transport physics, interfacial chemistry, mechanical behavior, and processing requirements, yet these differences also make them functionally complementary. Integrating the two material classes, however, remains challenging because of their distinct surface chemistries, deposition conditions, thermal budgets, and interfacial stability. Beyond the question of whether such dissimilar materials can simply coexist, a more important issue is whether their integration can create functions unavailable to either material alone. This review demonstrates how carefully engineered organic‐oxide heterointerfaces can transform material dissimilarity into a functional advantage, enabling sensing, memory, nonlinear signal processing, and computation. We classify hybridization at the circuit, channel, and interface‐layer levels and connect each architecture to its underlying charge‐injection, transfer, trapping, recombination, tunneling, and fluctuation mechanisms. Lateral and vertically stacked circuits exploit the natural polarity matching between p‐type organic and n‐type oxide semiconductors, whereas directly coupled or interlayer‐mediated channels enable ambipolar, anti‐ambipolar, negative‐transconductance, Gaussian‐like, and sigmoidal responses. Hybrid contact, dielectric, passivation, and charge‐storage layers further regulate injection barriers, molecular organization, photogating, and carrier retention. By linking hybrid architecture and interface coupling to device transfer functions and target applications, this review presents organic‐oxide heterointerfaces as a design platform for thin‐film transistors and heterojunction devices.