A micro-power complementary metal oxide semiconductor (CMOS) low-noise amplifier (LNA) is presented based on subthreshold MOS operation in the GHz range. The LNA is fabricated in an 0.18-μm CMOS process and has a gain of 13.6 dB at 1 GHz while drawing 260 μA from a 1-V supply. An unrestrained bias technique, that automatically increases bias currents at high input power levels, is used to raise the input P1dB to -0.2 dBm. The LNA has a measured noise figure of 4.6 dB and an IIP3 of 7.2 dBm.
No takes yet. Share an insight, caveat, or question.
Perumana et al. (2005) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: