Fabrication of high power InGaAs/AlInGaAs strainedSQW lasers on InGaAs ternary substrates

High quality In0.03Ga0.97As ternary substrates have been fabricated by the liquid encapsulated Czochralski (LEC) technique using a semi-infinite melt approach. Lasers using the AlInGaAs/InGaAs alloy system have been fabricated on the conducting substrates for the first time. Pulsed powers of 16.2 W at 40 A have been recorded for devices emitting at 1.035 µm. Threshold current densities were 595 Acm-2 and the characteristic temperatures were 100 K. These data demonstrate the commercial potential of ternary substrate manufacture.