The properties of plasma in Ar/N2 microwave electron cyclotron resonance discharge with a percentage of N2 flow rate ranging from 5% to 50% have been studied in order to understand the effect of N2 flow rate on the mechanical properties of silicon nitride films. N2+ radicals as well as N2, N+ are found by optical emission spectroscopy analysis. The evolution of plasma density, electron kinetic energy, N2+, N2, and N+ emission lines from mixed Ar/N2 plasma on changing mixture ratio has been studied. The mechanisms of their variations have been discussed. Moreover, an Ar/N2 flow ratio of 2/20 is considered to be the best condition for synthesizing a-Si3N4, which has been confirmed in the as-deposited silicon nitride films with quite good mechanical properties by nanoindentation analyses.
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Ding et al. (2009) studied this question.
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