Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy

We report on the correlation between the electrical behavior and valence band spectra of undoped and Al-doped ZnO films, obtained by using x-ray photoelectron spectroscopy. Although Al-doping can induce a conductivity increase of two orders of magnitude, we show that the gap persists and there is no semiconductor–metal transition upon doping. For the 3% Al-doped ZnO film, we measure a reduction in the band gap of ∼150meV with respect to the undoped and the 1% doped films. Our results suggest that the band conduction mechanism proposed for undoped ZnO at room temperature still dominates the conduction process in doped films.