Exploratory advancement on N-F induced UV-C gain of Al0.30Ga0.70N/GaN heterostructure under semiconductor quantum technology

This modern research letter has been aimed to study an exploratory advancement on N-F (Neutron-Flux) induced UV-C Gain (Ultraviolet-C Gain) of Al 0.30 Ga 0.70 N/GaN hetero-nanostructure for emerging sterilization applications under semiconductor quantum technology. In this work, on the foundation layer of GaN substrate, heterostructure of 5 quantum layers has been fabricated by simulation method. Using a gain equation based on k.p effective mass quantum theory, the band gap energy and other gain characteristics, such as the UV-C gain coefficient without influence, the influence-induced UV-C gain coefficient, and the peak UV-C gain coefficient, have been calculated. In the simulation, when neutron flux is applied to the hetero-nanostructure, the height of the conduction barrier increases, so electron leakage tends to diminish; hence, the energy separation of the quasi-Fermi levels increases, so UV-C gain increases. The maximum UV-C gain ∼9000/cm has been obtained at 254 nm for neutron flux 10.8 × 10 11 /cm 2 s. 254 nm UV-C light has 99.9% sterilizing capacity to destroy the DNA structure of bacteria and viruses without using any chemicals. So, this Al 0.30 Ga 0.70 N/GaN quantum heterostructure provides a substantial role in the formation of high quality 254 nm UV-C emitting devices under semiconductor quantum nanotechnology.