Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

Deep-trap properties of high-dielectric-constant (k) HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300–500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8 × 10−16 cm2 and 1.0 × 1016 cm−3, respectively.