High-Performance Drain-Offset a-IGZO Thin-Film Transistors

We report the effect of the drain-offset length on the performance of amorphous-indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from~40 to 10cm²/V· sby increasing the drain-offset length from 0 to 5, the threshold voltage(Vₜₕ)and swing$(S)$remain relatively independent of the offset length variation. Because of its high mobility even for large (5) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays.