Organic memory device with poly-L-lysine nanoparticles embedded as charge trapping layer

Recent bioelectronics has been rapidly evolved based on versatile biomolecules such as carbohydrate, amino acid, and nucleotide. In this study, polymeric amino acids of poly-L-lysine nanoparticles (PLL NPs) were synthesized and fabricated as charging elements for biosemiconductor of indigo memory devices. The PLL NPs as charge trapping layer (CTL) for non-volatile memory was self-assembled as floating gate (FG) layer by epoxy-amine bonds between 3-glycidylpropyl trimethoxysilane functionalized dielectrics and self-assembly monolayers (SAMs) of the PLL NPs. A memory window of + 5.1 V (ΔV FB ) represented by capacitance-voltage hysteresis was obtained for metal-indigo-insulator-silicon (MIIS) capacitor. In addition, program/erase operations controlled by gate bias (−/+ 30 V) were demonstrated in the PLL NPs embedded indigo thin film transistor (TFT) device with citric acid (CA) crosslinked polyvinylalcohol (PVA) dielectric on flexible substrate of poly ethylene terephthalate (PET). These results can be further extended to development of fully biomaterial-based memory device targeted to signal interface between biological logics and computer.