Temperature Relaxation of the Contact Angle during the Growth of Silicon Nanowires by the Vapor→Liquid→Solid Mechanism

The temperature relaxation of the contact angle of wetting of the end surface of Si nanowires by liquid-phase droplets of a metal catalyst was studied. It was shown that the relaxation of the contact angle is caused by a longer relaxation time of the process of substance transfer across the crystal/liquid interface compared to the temperature relaxation time and leads to a change in the crystal radius.