Defects in plasma-deposited hydrogenated amorphous silicon prepared under visible light illumination

Experimental studies have been made on the defects in undoped plasma-deposited hydrogenated amorphous silicon prepared with visible light illumination on a growing surface. This material (referred to as illuminated GD a-Si:H) has a broad defect band around midgap (Ec −1.4 eV 1.2 eV) of the defect band does not increase with long exposure to light. One probable candidate for the origin of ST2 is a Si dangling bond coupled with another Si dangling bond or with residual impurities.