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This letter presents a C-band 50-W high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-μ mgallium nitride (GaN) high electron mobility transistor (HEMT) process. A multiple reactance matching method in output matching network (OMN) is proposed, which can achieve high harmonics suppression (HSs) while maintaining good bandwidth and low loss. The pulse excitation measurement results of the proposed MMIC show that the saturated output power exceeds 50 W in the 5–7-GHz frequency range, the power added efficiency (PAE) is more than 52%, the associated power gain is over 21 dB, and the second harmonic suppression (HS2) and the third harmonic suppression (HS3) reach more than 41 and 43 dBc, respectively. Besides, the area of the MMIC is3.55×4.05mm2.
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Yang et al. (2022) studied this question.
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