Photogalvanic Currents and Electrical Inhomogeneity of a 2D Structured Single Crystal of Ferroelectric–Semiconductor

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The experiment, which makes it possible to clarify the mechanism of formation of electrical inhomogeneity of a TlGaSe2 crystal, is described. Evolution of the anomalous reaction of the crystal on photoexcitation has been investigated, and interpretation of the main processes determining the signal dynamics is proposed. It is shown that the dominant contribution to development of anomalies and formation of electrical inhomogeneity of the crystal is from photogalvanic emf. Participation of deep-level defects as charge localization centers in the formation of electrical inhomogeneity of a layered ferroelectric–semiconductor crystal is also considered.