Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga 2 O 3 thin-film heterojunction

In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga 2 O 3 /lead zirconate titanate (Pb(Zr 0.52 Ti 0.48 )O 3 , PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga 2 O 3 -based device, the heterojunction device achieved a lower dark current of 2.7 × 10 −11 A, a higher photo- to dark-current ratio of 2 × 10 3 , a higher responsivity of 5.5 mA W −1 , a larger specific detectivity of 2.6 × 10 11 Jones and a higher external quantum efficiency of 2.7% at −2 V under 254 nm UV light illumination with an intensity of 500 μ W cm −2 . The p-PZT/n-Ga 2 O 3 was confirmed to be a potential candidate for the construction of DUV photodetectors with enhanced sensing performance.