Quasi-Aligned Ga2O3 Nanowires Grown on Brass Wire Meshes and Their Electrical and Field-Emission Properties

Quasi-aligned β-Ga 2 O 3 nanowires were fabricated using the brass wire meshes as the substrates. The nanowire roots were tightly connected to the brass wire surfaces that resulted in a very good physical and electrical contact. Electrical measurements showed that the ohmic contacts were achieved and the resistivities of the nanowires were 300−500 Ω·cm. The Ga 2 O 3 nanowire/brass wire hybrid structures exhibited an enhanced field-emission performance. A turn-on field of ∼6.2 V·μm −1 at an emission current density of 10 μA·cm −2 and an emission current fluctuation within ±13% at a mean field-emission current density of ∼0.56 μA·cm −2 were measured.