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Scanning tunneling microscopy is used to capture the initial stage of the transition from c(4×4) to (2×4) reconstruction on a GaAs(100) surface. A model for the transition is proposed in which surface atoms escape from the c(4×4) reconstructed area to form (2×4) reconstructed islands and pits. The proposed explanation is consistent with c(4×4) models having species intermixing in the first or second layer.
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Wang et al. (2003) studied this question.
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