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Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387 °C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te Kα to Cd Kα fluorescence yield at different annealing temperatures. Our results suggest that the concentration of migrated Te atoms in the CdS layer increases with the annealing temperature, and the Te/Cd ratio in the CdS layer could even become greater than that in CdTe with annealing temperatures higher than 370 °C.
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Soo et al. (1999) studied this question.
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