This paper reviews recent progress in the development of integrated optical circuits involving the GaAs/AfGaAs double heterostructure system. Devices utilizing periodic corrugations or gratings are considered briefly, whereas alternative attempts to fabricate optical circuits by chemical etching are discussed in detail. The InGaAsP/InP system is also considered. Recent advances in processing techniques for optical integration, including reactive ion etching, are described, along with recent measurements that correlate waveguide loss with epitaxial layer uniformity.
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Merz et al. (1985) studied this question.
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