A 40 Gbit/s 1:4 demultiplexer IC with a power dissipation of 2.97 W has been successfully fabricated using reliable, non-self-aligned, InP-based heterojunction bipolar transistors (HBTs) with a carbon-doped base and InGaAs/InP composite-collector. This is the first demonstration of all bipolar transistor 1:4 demultiplexers operating at such a high bit rate.
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Sano et al. (1999) studied this question.
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