Both Npn and Pnp heterojunction bipolar transistors were fabricated using the GaInP/GaAs system for the first time by MOCVD to investigate the band lineup of the GaInP/GaAs system. By comparing the collector current, current gain and offset voltage of the Npn and the Pnp HBTs, most of the bandgap difference was found to be in the valence band.
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Kawai et al. (1989) studied this question.
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