We report on the transport properties of LaTiO3+ε and LaTiO3.5 films. The LaTiO3+ε samples show metallic transport and several samples exhibit a hysteretic drop of resistance during cooldown at ∼240 K. The ferroelectric LaTiO3.5 samples, grown in capacitor structures, have nonlinear, diode-like and hysteretic V(I) characteristics. Two charge-controlled transport regimes are found, which can be utilized for switching the devices between two voltage states.
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Schmehl et al. (2003) studied this question.
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