Luminescence images of silicon solar cells contain information about local recombination properties and local series resistance. It is difficult to separate the information and interpret single images correctly and quantitatively though, which greatly limits the use of single luminescence images, in particular for the application as an in‐production characterization tool. We therefore developed a fast method based on photoluminescence imaging for a spatially resolved coupled determination of the dark saturation current and series resistance (C‐DCR). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Glatthaar et al. (2009) studied this question.
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