Analysis of Skin Effect and Its Application in Analytical Model Refinement for Electromagnetic Repulsion Mechanisms

The electromagnetic repulsion mechanism (ERM) is essential for achieving the millisecond‐scale response times required by ultrafast mechanical switches. While equivalent circuit models (ECM) offer a computationally efficient alternative to finite element analysis (FEA) for structural optimization, they often suffer from inaccuracies by assuming a uniform eddy current distribution and neglecting the skin effect in the repulsion disk. This paper addresses this limitation by introducing a dynamic skin factor correction to enhance the accuracy of the ECM. First, we provide a theoretical derivation using Hankel and Laplace transforms to demonstrate that the magnetic field penetration depth in ERMs is intrinsically time‐dependent, following a relationship under pulsed excitation. Second, we propose a methodology to extract equivalent skin depths from transient FEA simulations to construct a time‐varying skin factor that accounts for the evolving current distribution. Finally, we integrate this factor into the ECM to dynamically adjust the equivalent resistance and inductance. Validation against FEA results demonstrates that the proposed model significantly improves motion prediction across various disk thicknesses. This research provides a high‐fidelity, efficient analytical tool that bridges the gap between rapid design iteration and physical accuracy in the development of fast mechanical actuators.