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In this letter, we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) cointegration with 380 μm-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of Pt/TiO2/Pt or Pt/TiO2memory cells on 140 and 60 μm diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.
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Sacchetto et al. (2011) studied this question.
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