Structural characterization of crystallized Si thin film material by HRTEM and Raman spectroscopy

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Comparative structural analyses of a crystallized, 60 nm thick silicon film deposited on quartz substrate were performed using high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy (RS). Both methods suggest high degree of crystallization of the film. The material of the film consists of crystalline grains with sizes up to 20 nm (HRTEM) and the mean size of the grains is ∼4 nm (RS). HRTEM results suggest large scatter of the crystal orientations of the grains. The existence of boundary defects between grains grouped in large agglomerates was also detected by HRTEM. RS analyses indicate large compressive strain in the system and the existence of high pressure Si phases in the material of the film.