The first measurement of the far-infrared absorption spectrum of a bound exciton is reported. This spectrum reveals the odd-parity excited states of the exciton, which cannot be observed by other means. The excited-state spectrum is found to be in excellent agreement with those of acceptors in Si, verifying earlier predictions of the level structure for isoelectronic bound excitons.
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Labrie et al. (1984) studied this question.
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