The electrical properties of the mercury cadmium telluride semiconductor material grown by the molecular-beam epitaxy are reviewed. The doping effects linked to the growth conditions, as well as the influence of indium or lithium incorporation are discussed. The results on doping by silicon, arsenic, and antimony are presented. It will be shown that all the impurities studied interact primarily with the metal site. It will confirm that the growth occurs under very rich tellurium conditions.
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Boukerche et al. (1988) studied this question.
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