Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densities

A simple analytical method is suggested to calculate the mobility of majority carriers in semiconductors. The method allows one to adequately describe experimental data in a wide range of temperatures and doping levels in various kinds of semiconductors: elementary (Si), III-V (GaAs), IV-IV (various SiC polytypes), and III-N (GaN). The high accuracy of the results of the calculation suggests that the method is universal, and it may be used to calculate the mobility of majority carriers in other semiconductor materials. The simplicity and accuracy of the technique make it promising for computer simulations of multilayer semiconductor structures.