A systematic method of growing rod-like β-Si3N4 single crystals from a melt flux has been developed. β-Si3N4 particles with a diameter of 1-2μm, a length of 10-20μm and a low density of defects were obtained by heating a mixture of α-Si3N4, Y2O3 and SiO2. The residual glassy phase was removed by subsequent acid treatments.
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Hirao et al. (1993) studied this question.
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