On the solid-phase epitaxy of the a-Si:B/c-Si interface

By means of large-scale atomistic simulations we investigate the recrystallization features of an interface between boron-doped amorphous silicon and crystalline silicon. Present simulations are both consistent with available experimental information and predictive as far as the relevant elementary mechanisms occurring during solid-phase epitaxy. In particular, we prove that the experimentally observed solubility limit for electrically active boron is due to sizeable boron ripening phenomena, occurring in the amorphous-silicon region, as well as during recrystallization.