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The energy distribution of grain boundary traps in polycrystalline silicon films is determined from the activation energy of resistivity measured as a function of boron and phosphorus doping concentrations. The energy distribution is expressed as the Gaussian distribution with its center located at 0.10 eV under the midgap and the standard deviation of 0.18 eV.
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Yamamoto et al. (1992) studied this question.
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