Attempt to grow diamond phase carbon films from an organic solution

Diamond phase carbon films have been grown on silicon substrates at temperatures of less than 50 °C by using an organic solution. Substrates were negatively biased with sufficient dc potential to simulate ionized deposition conditions used in physical vapor deposition. The surface morphology, crystal structure, and some physical properties of the films were examined by scanning electron microscopy, transmission electron microscopy, x-ray photoemission spectroscopy. It was confirmed that the film is composed of small grains of diamond phase or diamondlike structure.