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A novel approach is proposed for the fabrication of planar nanoscale vacuum electronic devices (NVEDs), combining chemical mechanical polishing (CMP) and selective etching techniques. Utilizing this method, we successfully fabricated planar NVEDs featuring uniform vacuum channels as narrow as 14 nm. Electrical measurements under atmospheric conditions demonstrated excellent field emission characteristics and relatively low turn-on voltage of 1.8 V. Furthermore, temperature-dependent measurements were conducted to investigate the device’s thermal behavior thoroughly. The precise controllability of the channel dimensions and high compatibility with conventional CMOS processes make this method a competitive option for the fabrication of NVEDs.
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Chen et al. (2025) studied this question.
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