Plasmon enhanced light management in perovskite/CIGS tandem solar cells using four sided nanopyramids

This study investigates the effect of plasmonic nanoparticle geometry on the optical and photovoltaic performance of perovskite/CIGS tandem solar cells using three-dimensional finite-difference time-domain (FDTD) simulations and drift–diffusion device modeling. Three nanoparticle geometries—four-sided pyramidal, cubic, and cylindrical—were incorporated within the CIGS absorber to enhance light trapping through localized surface plasmon resonances (LSPRs) and plasmon-assisted scattering. All nanoparticle configurations improved absorption relative to the reference device, with the four-sided nanopyramid providing the most pronounced and broadband enhancement owing to its sharp-edge field localization and efficient scattering pathways; the numerical convergence of the optical results was confirmed through a quantitative mesh-independence analysis. Current–voltage analysis showed that the four-sided nanopyramid produced the highest short-circuit current density, followed by the cubic and cylindrical structures. Optimization of the pyramid dimensions revealed that for a = 75 nm (length, width, and height), the photocurrent approached 18 mA/cm 2 , compared with approximately 12 mA/cm 2 for the reference cell without nanoparticles. Based on the idealized photovoltaic model, this enhancement corresponds to a power-conversion efficiency (PCE) rise from 16.22 % (reference) to 26.27 % (optimized nanopyramid device). To evaluate the physical relevance of this result, drift–diffusion device simulations were additionally performed under ideal and realistic contact conditions. Under ideal-contact conditions, the nanopyramid-integrated device achieved a PCE of 24.80 %, in close agreement with the idealized model, whereas realistic-contact conditions, including series resistance and contact-related losses, reduced the PCE to 20.63 %. Carrier-generation rate distributions confirmed that sharp-tip geometries concentrate electromagnetic fields more effectively than smoother counterparts, producing stronger localized carrier generation.