The advancement of near‐infrared phosphor‐converted light‐emitting diodes (NIR pc‐LEDs) for next‐generation optoelectronic applications is critically dependent on the availability of high‐performance phosphors. In this study, a series of NIR‐emitting phosphors with high luminescence efficiency and excellent stability was developed by co‐doping Cr 3+ , Yb 3+ into the Mg 2 SiO 4 (MSO) host. Efficient energy transfer from Cr 3+ to Yb 3+ was achieved in the MSO: Cr 3+ , 2.5%Yb 3+ phosphor, reaching an energy transfer efficiency of 91.82%, as determined from the luminescence intensity measurement. The optimal MSO: Cr 3+ , 1.5%Yb 3+ phosphor exhibits a remarkable internal quantum efficiency (IQE) of 71.8% and an external quantum efficiency (EQE) of 48.8%. It also demonstrates remarkable thermal stability, retaining 71.5% of its initial intensity at 423 K. Additionally, the material shows exceptional humidity resistance, retaining approximately 98.05% of its initial intensity after 7 days of exposure to harsh conditions (85°C and 85% relative humidity, RH). Notably, no significant chromaticity shift is observed at elevated temperatures, indicating excellent color stability. Finally, an NIR pc‐LED was fabricated by combining the optimized phosphor with a 450 nm commercial blue LED chip. The device delivers a high output power of 718.67 mW with an electro‐optical conversion efficiency of 12.53% at a driving current of 600 mA. Collectively, these results underscore the promising potential of this phosphor for applications in optical bioimaging and night vision.
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Yan et al. (2026) studied this question.
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