MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing

A cleanroom‐free process was developed for the fabrication of ultralow‐power resistive switching devices. Sub‐micron‐thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two‐layer molybdenum disulfide (MoS 2 ) is used as the active layer, which was prepared and deposited by the Langmuir‐Schaefer technique. Devices with 30 × 30 µm 2 with volatile and non‐volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 10 6 , an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 10 5 s. By employing high‐resolution printing techniques and an ultra‐conformable liquid‐based two‐dimensional materials deposition process, cost‐efficient and high‐performance resistive switching devices were fabricated for next‐generation computation and communication.