Single-crystal alloys of diamond with Si and Ge are investigated theoretically. An indirect band gap Γv25′ → Δc1 is found for the new semiconductor Si1−x−yGexCy over most compositions x and y, with an indirect Γv25′ → Lc1 gap found for the remaining compositions. The estimated band gaps span the 0.62–5.5-eV-range. Predictions are made for band gap versus lattice parameter in the new alloy semiconductors Si1−xCx and Ge1−xCx.
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Richard A. Soref (1991) studied this question.
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