Electrical properties of TlTe single crystals

Single crystals of TlTe are grown from Te‐rich melt at 280°C. Resistivity, Hall coefficient, magnetoresistance, and thermoelectric power are measured. The experimental results are explained by the assumption of an uncompensated semimetal model, where the band overlapping energy between conduction and valence bands E0 is 0.20 eV in the high‐temperature phase above 172 K and 0.10 eV in the low‐temperature phase. The effective masses of electrons and holes are m = 1.0m0 and m = 1.5m0, respectively, in both the temperature phases.