Electrical Properties of Ferrocene-Doped Bi2Se3 Nanostructures: Toward Magnetic Topological Devices

Here, we report the synthesis and electrical properties of ferrocene-doped Bi2Se3 nanostructures with a large surface-to-volume ratio (nanoribbons and ultrathin films) obtained via a cost-efficient physical vapor deposition (PVD) technique. Comprehensive structural characterization confirms the successful incorporation of the magnetic dopant while preserving the crystalline quality of the Bi2Se3 nanostructures. Low-temperature magnetotransport and thermoelectric measurements reveal systematic changes in the electrical transport induced by magnetic doping. In particular, magnetotransport measurements show the signatures of the anomalous Hall effect together with weak anti-localization suppression. These results demonstrate that ferrocene-assisted PVD provides a simple and effective route for tailoring the electrical properties of Bi2Se3 nanostructures, making them promising candidates for magnetic topological devices.