Spatial distribution of electron-hole pairs induced by electrons and protons in SiO/sub 2/

The spatial distribution of electron-hole pairs in SiO/sub 2/, induced by electrons and protons, was simulated using a new Monte Carlo (MC) code which calculates the full track structure with parameters found using the complex dielectric function theory for electron energies above 50 eV. For electrons below 50 eV, we included interactions with phonons. Track structure calculations were used to find the spatial distribution of the electron-hole pairs. The charge-yield for electrons and protons under electric field has been calculated directly, without using either the columnar or the geminate models for charge recombination. A good agreement is found with experimental charge-yield results.