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An increase in the solar‐to‐electrical conversion efficiency beyond that due to chemisorption of ruthenium results from subsequent adsorption of lead from alkaline solutions on both single crystal and polycrystalline n‐GaAs photoanodes. An efficiency of 7.8% is reached with thin film, chemically vapor deposited polycrystalline GaAs in the cell n‐GaAs/0.8 M K2Se0.1 M K2Se21 M KOH/C.
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Heller et al. (1980) studied this question.
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